APTGF180A60T APTGF180A60T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 1-6 application welding converters switched mode power supplies uninterruptible power supplies motor control features non punch through (npt) thunderbolt igbt ? - low voltage drop - low tail current - switching frequency up to 100 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated kelvin emitter for easy drive very low stray inductance - symmetrical design - lead frames for power connections internal thermistor for temperature monitoring high level of integration benefits outstanding performance at high frequency operation stable temperature behavior very rugged direct mounting to heatsink (isolated package) low junction to case thermal resistance solderable terminals both for power and signal for easy pcb mounting easy paralleling due to positive tc of vcesat low profile absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followed. vbus q1 g1 e1 out nt c2 0/vbus g2 e2 nt c1 q2 out out ntc2 vbus e1 g2 e2 ntc1 0/vbus g2 e2 g1 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 220 i c continuous collector current t c = 80c 180 i cm pulsed collector current t c = 25c 630 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 833 w rbsoa reverse bias safe operating area t j = 150c 630a @ 600v v ces = 600v i c = 180a @ tc = 80c phase leg npt igbt power module
APTGF180A60T APTGF180A60T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 150a 600 v t j = 25c 150 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 3000 a t j = 25c 2.0 2.5 v ce(on) collector emitter on voltage v ge =15v i c = 180a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 3 5 v i ges gate ? emitter leakage current v ge = 20 v, v ce = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 8.6 c oes output capacitance 0.94 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.8 nf q g total gate charge 660 q ge gate ? emitter charge 580 q gc gate ? collector charge v gs = 15v v bus = 300v i c = 180a 400 nc t d(on) turn-on delay time 26 t r rise time 25 t d(off) turn-off delay time 150 t f fall time 30 ns e on turn-on switching energy 6.74 e off turn-off switching energy inductive switching (25c) v ge = 15v v bus = 400v i c = 180a r g = 2.5 5.74 mj t d(on) turn-on delay time 26 t r rise time 25 t d(off) turn-off delay time 170 t f fall time 40 ns e on turn-on switching energy 8.6 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 400v i c = 180a r g = 2.5 7 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit i f(av) maximum average forward current 50% duty cycle t c = 70c 120 a i f = 120a 1.6 1.8 i f = 240a 1.9 v f diode forward voltage i f = 120a t j = 125c 1.4 v t j = 25c 85 t rr reverse recovery time i f = 120a v r = 400v di/dt =800a/s t j = 125c 160 ns t j = 25c 520 q rr reverse recovery charge i f = 120a v r = 400v di/dt =800a/s t j = 125c 2800 nc e on includes diode reverse recovery in accordance with jedec standard jesd24-1
APTGF180A60T APTGF180A60T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 3-6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.15 r thjc junction to case diode 0.32 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 4.7 n.m wt package weight 160 g temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k b 25/85 t 25 = 298.16 k 4080 k
t t b r r t 1 1 exp 25 85 / 25 25 package outline t: thermistor temperature r t : thermistor value at t
APTGF180A60T APTGF180A60T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 4-6 typical performance curve output characteristics (v ge =15v) t j =-55c t j =25c t j =125c 0 100 200 300 400 500 600 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =-55c t j =25c t j =125c 0 100 200 300 400 500 600 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle ic=360a ic=180a ic=90a 0 1 2 3 4 5 6 7 8 6 8 10 12 14 16 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle ic=360a ic=180a ic=90a 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.70 0.80 0.90 1.00 1.10 1.20 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 80 160 240 320 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature gate charge v ce =120v v ce =300v v ce =480v 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 500 600 700 gate charge (nc) v ge , gate to emitter voltage (v) i c = 180a t j = 25c output characteristics (v ge =10v) t j =-55c t j =25c t j =125c 0 100 200 300 400 500 600 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle
APTGF180A60T APTGF180A60T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 5-6 v ge = 15v 15 20 25 30 35 50 100 150 200 250 300 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current tj = 25c v ce = 400v r g = 2.5 ? v ge =15v, t j =25c v ge =15v, t j =125c 50 100 150 200 250 50 100 150 200 250 300 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 400v r g = 2.5 ? v ge =15v, t j =125c 0 20 40 60 80 50 100 150 200 250 300 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v r g = 2.5 ? t j = 25c t j = 125c 0 20 40 60 80 50 100 150 200 250 300 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v, v ge = 15v, r g = 2.5 ? t j =25c, v ge =15v t j =125c, v ge =15v 0 4 8 12 16 50 100 150 200 250 300 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector curren t v ce = 400v r g = 2.5 ? t j = 25c t j = 125c 0 2 4 6 8 10 12 50 100 150 200 250 300 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v ge = 15v r g = 2.5 ? eon, 360a eoff, 360a eon, 180a eoff, 180a eon, 90a eoff, 90a 0 8 16 24 32 0 5 10 15 20 25 gate resistance (ohms) switching energy losses vs gate resistance switching energy losses (mj) v ce = 400v v ge = 15v t j = 125c eon, 360a eoff, 360a eon, 180a eoff, 180a eon, 90a eoff, 90a 0 4 8 12 16 20 0 255075100125 t j , junction temperature (c) switching energy losses (mj) switching energy losses vs junction temp. v ce = 400v v ge = 15v r g = 2.5 ?
APTGF180A60T APTGF180A60T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 6-6 cies cres coes 100 1000 10000 100000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0 100 200 300 400 500 600 700 0 200 400 600 800 i c , collector current (a) minimum switching safe operating area v ce , collector to emitter voltage (v) 0.9 0.35 0.25 0.15 0.05 0.025 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current 0 20 40 60 80 100 40 80 120 160 200 240 i c , collector current (a) f max , operating frequency (khz) v ce = 400v d = 50% r g = 2.5 ? t j = 125c apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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